2N7002A
Marking Information
MN1 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Date Code Key
MN1
Chengdu A/T Site
MN1
Shanghai A/T Site
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Year
Code
2008
V
2009
W
2010
X
2011
Y
2012
Z
2013
A
2014
B
2015
C
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
60
±20
Units
V
V
Continuous Drain Current (Note 5) V GS = 10V
Continuous Drain Current (Note 6) V GS = 10V
Steady
State
Steady
State
T A = +25°C
T A = +85°C
T A = +100°C
T A = +25°C
T A = +85°C
T A = +100°C
I D
I D
180
130
115
220
160
140
mA
mA
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
I S
I DM
0.5
800
A
mA
Thermal Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 6)
P D
R θ JA
R θ JC
T J, T STG
370
540
348
241
91
-55 to +150
mW
°C/W
°C
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
2N7002A
Document number: DS31360 Rev. 12 - 2
2 of 6
www.diodes.com
July 2013
? Diodes Incorporated
相关PDF资料
2N7002DW-7 MOSFET N-CHANEL DUAL 60V SOT-363
2N7002DW MOSFET N CH DL 60V 115MA SC70-6
2N7002E-7-F MOSFET N-CH 60V 240MA SOT23-3
2N7002ET3G MOSFET N-CH 60V 260MA SOT-23
2N7002K-7 MOSFET N-CH 60V 300MA SOT23-3
2N7002KT3G MOSFET N-CH 60V 320MA SOT-23
2N7002KW MOSFET N-CH 60V 310MA SOT323
2N7002K MOSFET N-CH 60V 115MA SOT23
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